BoilingPoint:-20°
EINECSNumber:214-184-7
MeltingPoint:-150°
MolecularWeight:60.17
AlternativeName:2MS
SpecificGravity:0.68
HMISKey:3-4-1-X
Formula:C2H8Si
TSCA:TSCA
Application:GeneratescubicsiliconcarbidebyplasmaCVD.1
EpitaxialgrowthofcubicsiliconcarbidecarriedoutbytriodeplasmaCVD.2
Reference:1.Hashim,A.etal.SemiconductorElectronics,IEEInt'l.Conf.Proc.2006,646.
2.Yasuiet,K.etal.Appl.Surf.Sci.2000,159,556.
AdditionalProperties:Dipolemoment:0.75debye
?Hcomb:-624kcal/moleCriticaltemperature:125°
?Hform:-23kcal/mole?Hvap:5.5kcal/mole
CVDprecursorforlowkdielectriclayersindamascenemetallizationapplicationsVaporpressure,-80°30mm