ossilaprovidesarangeofRegioregularpoly(3-hexylthiophene-2,5-diyl),commonlyknownasP3HT,withdifferentmolecularweightsandregioregularitiesforavarietyofresearchpurposes.ProducedbyMerckKGaAundertheLisicon^®brandthishighqualityP3HTcollectionallowsawiderrangeofscienceandengineeringtobeundertakenthanbyusingasingleP3HT.

ThehighestregioregularityP3HT(M104,RR=96.3%)produceshighlycrystallinefilmsandisrecommendedforOFETs,nanofibrilformationandfastdryingOPVsatthethininterferencepeak(90nm).However,theexceptionallyhighregioregularityofthisP3HTmeansthatgellingandsurfaceroughnesscanbeanissueforslow-dryingthick-filmOPVs(>200nm).LowermolecularweightandregioregularityP3HTisrecommendedforinkjetandotherlargeareaorslowdryingdepositiontechniqueswheregelling/aggregationandsurfaceroughnessneedtobeavoided.

Afabricationreportwithmobilitymeasurementsof0.12cm²/VsforM104canbefoundbelow.

AlltheP3HTbelowishighlysoluble(50mg/ml)inchlorinatedsolventssuchaschloroform,chlorobenzene,dichlorobenzeneandtrichlorobenzene.TheintermediateandlowermolecularweightP3HTmaterialsarerecommendedforusewithnon-chlorinatedsolventssuchasxylene,tolueneandTHFduetotheirincreasedsolubility.

GeneralInformation

Fullname	Poly(3-hexylthiophene-2,5-diyl)
Synonyms	P3HT
CASnumber	104934-50-1
Chemicalformula	(C4H2S)n
Molecularweight	SeeBatchDetailstableatbottomofthepageforinformation
HOMO/LUMO	HOMO=-5.2eV,LUMO=-3.2eV
Solubility	Chloroform,chlorobenzene
Classification/Family	Polythiophenes,Organicsemiconductingmaterials,Lowbandgappolymers,Polymerdonors,Organicphotovoltaics,Polymersolarcells,OLEDs,OFETs

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OFETFabricationRoutine

Fieldeffectmobilitiesinexcessof0.12cm²/VsarerecordedusingM104whentheactivelayerisdispensedonOTS-treatedsiliconoxidedielectricbystaticspincoatingfromanoptimizedhigh/lowboilingpointsolventmix.

HighholemobilityinconjunctionwithgoodsolubilityandpartialairstABIlitymakeregioregularP3HTareferencematerialofchoiceforbothfundamentalandappliedresearchinorganicelectronic,physicsandchemistry.Asoneofthemostwell-studiedorganicsemiconductor,P3HTisoftenacknowledgetobeoneofthebenchmarkagainstwhichanynewp-typeordonorconjugatemoleculeshouldbecomparedandevaluated.

Mobilityhaspreviouslybeenfoundtobepositivelycorrelatedwithincreasingregion-regularity,slowdryingtime(achievedusinghighboilingpointsolvent),loweringofthesurfaceenergy,andmolecularweightinexcessof50kD.Theseconditionsfavourp-pstackingparallelstotheOFETsubstrate,whichinturnresultsinimprovedchargetransportacrossthetransistorchannel[1-13].

Substratesize	20x15mm
Gateconductivity	1-30O·cm(Borondoped)
Siliconoxidethickness	300nm
Devicepersubstrates	Five,commongate
Channellength	30µm
Channelwidth	1000µm

Theactivelayersolutionpreparation,spincoating,substrateannealingandmeasurementsareperformedinagloveboxunderanitrogenatmosphere(H₂O<0.1PPM;O₂<5/8PPM).

ForgenericdetailsonthefabricationofOPVdevices,pleaseseeourwrittenguideandvideodemonstration.

ActiveLayerPreparation

High-RegioregularandhighmolecularweightRR-P3HT(M104)(RR=96.3%,Mw=77,500,Mn=38,700)isdissolvedinamixofhighandlowboilingpointsolventinordertoexploitthebeneficialeffectoflongdryingtimeandincreasethewettabilityoflowenergysurface,respectively.

• 5mg/mlofM104dissolvedinanhydrousChloroform:Trichlorobenzene(99:1)mix;
• Vialisplacedonhotplate(70°C)withastirrerbarfor30minutes;
• Solutioncooleddownatroomtemperatureandthenfilteredwitha0.45µmPTFE(hydrophobic)filter;
• Solutionstoredovernightonahotplateat30°CtopreventexcessiveaggregationoftheP3HTmolecules.

SubstrateCleaning

• Substratesloadedontosubstraterack(tokeeptheminuprightposition);
• SonicatedinhotHellmanexIIIsolution(1%)forfiveminutes;
• Rinsedtwiceinhotwater;
• SonicatedinwarmIsopropylalcohol(70°C)forfiveminutes;
• RinsedtwiceincoldDIwater;
• SubstratesstoredinDIwater.

ThermalDepositionofElectrodesandContactPads

• DoneonEdwards306Thermalcoaterincleanroomcondition;
• Substratesareblowndryandloadedinalowdensityevaporationstackwithalowdensityshadowmasktopatternthedesiredfeatures;
• Secondarymaskisaddedtoselectivelyevaporatethegateanddrain/sourcepads;
• Vacuumchamberpumpeddowntoavacuumpressureof5x10^-6mbar;
• Chromiumadhesionlayer:5nm,rate0.05nm/s;
• Aluminium:80nm,rate:0.4nm/s;
• Changedsecondarymasktodepositelectrodes(FETchannels);
• Vacuum:2-3x10^-6mbar;
• Chromiumadhesionlayer:1nm,rate0.05nm/s;
• Gold:40nm;rate0.05nm/s.

PFBTTreatmentforAuElectrodes(Laminarflow)

• Oxygenplasmatreatment,30secondsat100W;
• Substratesimmersedin2.5mMol/lsolutionofPFBTinisopropylalcoholatroomtemperature;
• Substratesrinsedtwiceinpureisopropylalcohol;
• Substratesareblownwithnitrogengun.

OTSTreatmentforSiO₂Dielectric(Laminarflow)

• AsolutionofOTS(25microlitres)incyclohexane(anhydrousgrade,1ml)preparedinglovebox;
• Substrates(pre-loadedonasubstraterack)loadedintotheannealingbeaker,whichisfilledwithapprox.50mlofcyclohexaneinafumehood;
• PreviouslypreparedOTSsolutionquicklyaddedtothecyclohexaneandmixedwithaPipettetip;
• Theglasslidisplacedhalfwayontothebeaker,whichiscarefullyfilledwithmorecyclohexaneuntilitisfullandthelidisfullyclosed;
• Thefinalsolution(60ml)containsOTSataconcentrationof1mMol/l;
• Substrateskeptfor20minutesintheOTSsolution;
• SubstratesremovedfromtheOTSsolution,quicklyrinsedtwiceincleancyclohexane,andthenareblowndrywithnitrogengun.

ContactAngleAssessment

Thewater-droptestonthetreatedsiliconisaquicktesttoqualitativelyassesstheeffectoftheOTSonthesiliconsubstratestoensurethatthefabricationhasfunctionedcorrectly.Youcangetagoodapproximationofthecontactangleusingyoureyeorasimpledigitalphoto.

Previousquantitativeassessmentshaveshownthatthisroutinewillproducecontactanglesbetween90and110°C(dependingonthelabtemperature,humidityandotherfactors).YoucanquantifythatcontactangleeasilyandaccuratelyusingtheOssilaContactAngleGoniometer.

P3HT(M104)spincoating(glovebox)

• 30µlofOrganicSemi-Conductor(OSC)solutiondeliveredonthemiddleofthesubstrateandthenspincoatedat1000rpmfor10sfollowedby60sat2000rpm;
• Cottonswabsoakedinchlorobenzenetothoroughlywipecleanthecontactpadsandtherestofthesubstrateswiththeexceptionoftheareaaroundthechannel;
• Highprecisioncottonswabtocleanbetweendevicestoavoidcross-talkingandreduceleakage;
• Substratesannealedat90°Cfor30minutes;
• Cooleddownfortenminutes;
• FivedevicespersubstratearecharacterisedusingOFETTestBoardforLow-DensityOFETsinaglovebox;
• Secondannealingat120°Cfor20minutes,slowcoolingdownatroomtemperatureandmeasurement;
• Annealingat150°Cfor20minutes,slowcoolingdownatroomtemperatureandmeasurement.

MSDS Documentation

P3HTMSDSsheet

BatchDetails

ThebelowP3HTisinstockforimmediatedispatch.

Batch	RR	Mw	Mn	PDI	Priceper1gram	Notes
M102	95.7%	65,200	29,600	2.20	£329	Discontinued
M103	94.2%	54,200	23,600	2.30	£329	Discontinued
M105	95.5%	94,100	49,500	1.90	£329	Discontinued
M106	94.7%	34,100	19,500	1.75	£329	Discontinued
M107	93.6%	24,480	8,750	2.8	£329	InStock
M108	94.2%	36,010	13,340	2.7	£329	InStock
M109	95.2%	36,600	18,300	2.0	£329	InStock
M1010	97.3%	74,000	35,240	2.1	£329	InStock
M1011	97.6%	60,150	28,650	2.1	£329	InStock

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Tothebestofourknowledgethetechnicalinformationprovidedhereisaccurate.However,Ossilaassumenoliabilityfortheaccuracyofthisinformation.Thevaluesprovidedherearetypicalatthetimeofmanufactureandmayvaryovertimeandfrombatchtobatch.

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